Improvement of linearity in trap-rich substrates for radio frequency applications: Which of donor and acceptor trap is the best?

Abstract

This paper investigates the effect of volume traps intentionally introduced into a silicon-on-insulator (SOI) substrate by inserting a layer of polysilicon beneath buried oxide. In radio frequency applications, this type of substrate, referred to as trap-rich, is known to considerably reduce the generation of harmonics resulting from the parasitic non-linear charge dynamics introduced by the substrate handler under the buried oxide. This analysis focuses on a test vehicle in the form of an integrated coplanar waveguide on two types of substrates, namely, high-resistivity SOI substrates with and without a trap-rich layer. From a modeling point of view, a simulation methodology is implemented in order to convert the 3D simulation of the coplanar waveguide into a 2D treatment that takes into account the wave propagation effect associated with the distributed nature of the transmission line. As a first step, this modeling strategy is implemented to reproduce the effect of increasing substrate resistivity on 2nd and 3rd harmonic reductions, leading to an excellent agreement with experimental data. Building on this validation of the simulation method, we have opted to simulate the non-linear response of the transmission line on the SOI trap-rich substrate by simplifying the trap distribution model. To avoid the adoption of unverified and strongly process-dependent trap distributions across the bandgap, a midgap monovalent trap density has been introduced, either acceptor or donor density. A monovalent density of acceptor traps with a concentration of 1016 cm−3 and a carrier lifetime of 0.1 ns has been shown to reproduce the experimental data very accurately with a substantial reduction in 2nd and 3rd harmonics. A detailed analysis of the displacement current waveforms explains the beneficial role of acceptor traps compared with donor traps.