Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

Author:

Sasaki K.R.A.,Manini M.B.,Simoen E.,Claeys C.,Martino J.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors;IEEE Journal of the Electron Devices Society;2023

2. Standard MOS Diodes Composed by SOI UTBB Transistors;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

3. Ultra-Low-Power Diodes Composed by SOI UTBB Transistors;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

4. Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications;IEEE Journal of the Electron Devices Society;2018

5. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View;Journal of Low Power Electronics and Applications;2015-04-29

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