Ultra-Low-Power Diodes Composed by SOI UTBB Transistors-Reference-Cited by-同舟云学术

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Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Latin American Electron Devices Conference (LAEDC)
language:
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Author:

Costa Fernando J.¹,Trevisoli Renan²,Doria Rodrigo T.³

Affiliation:

1. Centro universitário FEI,Student Member, IEEE, Electrical Engineering Department,São Bernardo do Campo,Brazil

2. Universidade Federal do ABC, UFABC,Member, IEEE, Pontifícia Universidade Católica de São Paulo, PUC-SP,São Paulo,Brazil

3. Centro universitário FEI,Member, IEEE, Electrical Engineering Department,São Bernardo do Campo,Brazil

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908183.pdf?arnumber=9908183

Reference20 articles.

1. Maximizing the Power Conversion Efficiency of Ultra-Low-Voltage CMOS Multi-Stage Rectifiers

2. Numerical Optimization of a Fully Cross-Coupled Rectifier Circuit for Wireless Passive Ultra Low Power Sensor Nodes;dominik;SENSORS,2019

3. Low Leakage SOI CMOS Static Memory Cell With Ultra-Low Power Diode

4. Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors;IEEE Journal of the Electron Devices Society;2023

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