Author:
Son Won-So,Sohn Young-Ho,Choi Sie-Young
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Kobayashi K, Yanagigawa H, Mori K, Yamanaka S, Fujiwara A. High voltage SOI CMOS IC technology for driving plasma display panels. In: Proceedings of the Tenth International Symposium on Power Semiconductor Devices and ICs, ISPSD, 1998; p. 141–4
2. Merchant S, Arnold E, Baumgart H, Egloff R, Letavic T, Mukherjee S, et al. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistor. In: Proceedings of the Fifth International Symposium on Power Semiconductor Devices and ICs, ISPSD, 1993; p. 124–8
3. Kwon O-K, Efland T, Ng WT, Malhi S, Todd R, Lee JK. Optimized 60 V Lateral DMOS Devices for VLSI Power Applications. In: VLSI Technology Symposium, 1991; p. 115–6
4. Zitouni M, Morancho F, Rossel P, Tranduc H, Buxo J, Pages I. A new concept for the Lateral DMOS Transistor for smart power ICs. In: Proceedings of the Eleventh International Symposium on Power Semiconductor Devices and ICs, ISPSD, 1999; p. 73–6
5. Linearly varying surface-implanted n-layer used for improving trade-off between breakdown voltage and on-resistance of RESURF LDMOS transistor;He;Microelectr. J.,2001
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献