Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/1073/7348/00297121.pdf?arnumber=297121
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1. Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT;IEEE Transactions on Electron Devices;2023-04
2. Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector;Advanced Materials;2022-10-17
3. A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage;Solid-State Electronics;2022-03
4. Analytical Model and Mechanism of Homogenization Field for Lateral Power Devices;IEEE Transactions on Electron Devices;2021-08
5. Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID;IEEE Transactions on Nuclear Science;2020-11
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