High-voltage SOI lateral MOSFET with a dual vertical field plate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/118502/pdf
Reference15 articles.
1. A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact
2. An oxide filled extended trench gate super junction MOSFET structure
3. SOI RESURF LDMOS transistor using trench filled with oxide
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates;Results in Physics;2019-03
2. Low Specific On-Resistance SOI LDMOS with Non-Depleted Embedded P-Island and Dual Trench Gate;Chinese Physics Letters;2018-03
3. A novel trench SOI LDMOS with a dual floating vertical field plate;Superlattices and Microstructures;2017-09
4. A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance;Chinese Physics Letters;2015-09
5. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation;Chinese Physics B;2015-02
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