One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/2/028502/pdf
Reference16 articles.
1. Analytical compact modeling and statistical variability study of LDMOS
2. Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors
3. Efficacy of Charge Sharing in Reshaping the Surface Electric Field in High-Voltage Lateral RESURF Devices
4. Extension of RESURF principle to dielectrically isolated power devices
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1. SiC-on-insulator based lateral power device and it’ s analytical models;Results in Physics;2024-03
2. A Numerical Study of the Impact Ionization Coefficient Approximation Model of 2-D Lateral Power Devices;2021 6th International Conference on Integrated Circuits and Microsystems (ICICM);2021-10-22
3. Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept;Japanese Journal of Applied Physics;2021-03-01
4. Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks;IEEE Access;2020
5. Effective Concentration Profile: A Novel 1-D Analysis of the Variation of Lateral Thickness (VLT) Lateral Power Devices;IEEE Journal of the Electron Devices Society;2020
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