Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors-Reference-Cited by-同舟云学术

Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors

Published:2012-03 Issue:3 Volume:52 Page:503-508
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cortés I.,Toulon G.,Morancho F.,Hugonnard-Bruyere E.,Villard B.,Toren W.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Switching characteristics of a thin film-SOI power MOSFET;Matsumoto;Jpn J Appl Phys,1995

2. Extension of RESURF principle to dielectrically isolated power devices;Huang;In Proc ISPSD,1991

3. Stepped-drift LDMOSFET: a novel drift region engineering device for advanced smart power technologies;Zhu;In Proc ISPSD,2006

4. Static and dynamic electrical performances of STI Thin-SOI power LDMOS transistors;Cortés;Semicond Sci Technol,2008

5. Safe operating area considerations in LDMOS transistors;Hower;In Proc ISPSD,1999

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