SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress-Reference-Cited by-同舟云学术

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SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

Published:2010-09 Issue:9 Volume:54 Page:979-984
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rahman M.S.,Evangelou E.K.,Androulidakis I.I.,Dimoulas A.,Mavrou G.,Galata S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge;Chen;IEEE Trans Electron Dev,2004

2. Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates;Mavrou;Appl Phys Lett,2008

3. First-principles study of the structural and electronic properties of (100) Ge/Ge(M)O2 interfaces (M=Al, La, or Hf);Houssa;Appl Phys Lett,2008

4. Charge detrapping in HfO2 high-κ gate dielectric stacks;Gusev;Appl Phys Lett,2003

5. Anomalous charge trapping dynamics in cerium oxide grown on Ge(100) substrates;Rahman;J Appl Phys,2008

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1. Dielectric properties and reliability enhancement of atomic layer deposited thin films by in situ atomic layer substrate biasing;Journal of Materials Chemistry C;2020

2. STRUCTURES AND ELECTRONIC PROPERTIES OF FOUR CRYSTAL GeO2 AND TWO RARE-EARTH ELEMENT OXIDES La2O3 AND CeO2: FIRST PRINCIPLES CALCULATION;Journal of Theoretical and Computational Chemistry;2013-08

3. Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates;Journal of Applied Physics;2012-11

4. Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs;Journal of Applied Physics;2012-09-15

5. Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors;Thin Solid Films;2012-01

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