Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications-Reference-Cited by-同舟云学术

Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications

Published:2004-08 Issue:8 Volume:48 Page:1433-1441
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kallfass Ingmar,Brazil Thomas J.,OhAnnaidh Breandan,Abele Peter,Hackbarth Thomas,Zeuner Marco,König Ulf,Schumacher Hermann

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Sub 100 nm gate technologies for Si/SiGe buried channel RF devices;Zeuner;Jpn. J. Appl. Phys.,2003

2. DC and high-frequency performance of a 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fmax=188 GHz at 300 K and fmax=230 GHz at 50 K;Enciso-Aguilar;Electron. Lett.,2003

3. Giguerre L, Aniel F, Enciso M, Herzog H-J, König U, Adde R. Physical modelling of short gatelength Si/SiGe n-MODFET. Proc GaAs Symposium, London 24th–25th September 2001. p. 139–42

4. Enciso M, Aniel F, Giguerre L, Crozat P, Adde R, Zeuner M, et al. High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temperature. Proc GAAS Symposium, London 24th–25th September 2001. p. 187–90

5. Zeuner M, König U. SiGe HFET technology. GaAs Symposium, London 24th–25th September 2001. WS Advanced Silicon Technology

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