Author:
Crupi Giovanni,Raffo Antonio,Avolio Gustavo,Bosi Gianni,Sivverini Giuseppe,Palomba Francesco,Caddemi Alina,Schreurs Dominique M.M.-P.,Vannini Giorgio
Funder
PANREX
Italian MIUR, FWO – Vlaanderen
EMRP
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
9 articles.
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1. Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-02
2. Measurement‐based analysis of
GaAs HEMT
technologies: Multilayer
D‐H
pseudomorphic
HEMT
versus conventional
S‐H HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-02-18
3. A design of 210 to 235
GHz
fixed tuned mixer using planar Schottky diode;International Journal of RF and Microwave Computer-Aided Engineering;2020-11-10
4. A HEMT large‐signal model for use in the design of microwave switching circuits;International Journal of RF and Microwave Computer-Aided Engineering;2019-12-11
5. A compact D-band monolithic APDP-based sub-harmonic mixer;Solid-State Electronics;2017-11