DC and high frequency performance of 0.1 [micro sign]m n-type Si∕Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K-Reference-Cited by-同舟云学术

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DC and high frequency performance of 0.1 [micro sign]m n-type Si∕Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K

Published:2003 Issue:1 Volume:39 Page:149
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Enciso-Aguilar M.,Aniel F.,Crozat P.,Adde R.,Herzog H.-J.,Hackbarth T.,König U.,von Känel H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030002?crawler=true&mimetype=application/pdf

Reference6 articles.

1. A plasma process for ultrafast deposition of SiGe graded buffer layers

2. Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Logic gates with a single Hall bar heterostructure;Applied Physics Letters;2006-10-09

2. Silicon-Germanium;Encyclopedia of RF and Microwave Engineering;2005-04-15

3. LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs;Materials for Information Technology;2005

4. High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition;Microelectronic Engineering;2004-10

5. Strained Si HFETs for microwave applications: state-of-the-art and further approaches;Solid-State Electronics;2004-08

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