Author:
Md Arshad M.K.,Makovejev S.,Olsen S.,Andrieu F.,Raskin J.-P.,Flandre D.,Kilchytska V.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. Faynot O, Andrieu F, Weber O, Fenouillet-Béranger C, Perreau P, Mazurier J, et al. Planar fully depleted SOI technology: a powerful architecture for the 20-nm node and beyond. In: IEEE electron devices meeting (IEDM); 2010. p. 3–2.
2. Silicon on insulator technologies and devices: from present to future;Cristoloveanu;Solid-State Electron,2001
3. Fringing fields in sub-0.1-μm fully depleted SOI MOSFETs: optimization of the device architecture;Ernst;Solid-State Electron,2002
4. Tsuchiya R, Horiuchi M, Kimura S. Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control. In: IEEE electron devices meeting (IEDM); 2004. p. 631–4.
5. Gallon C, Fenoujilet-Beranger C, Vandooren A, Boeuf F, Monfray S, Payet F, et al. Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner booster. In: Proc IEEE inter SOI conference; 2007. p. 17–8.
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