Suppression of Timing Variations due to Random Dopant Fluctuation by Back-gate Bias in a Nanometer CMOS Inverter
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Published:2021-04-16
Issue:3
Volume:14
Page:339-346
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ISSN:2352-0965
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Container-title:Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering)
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language:en
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Short-container-title:EEENG
Author:
Zhang Kai1,
Lu Weifeng1ORCID,
Si Peng1,
Zhao Zhifeng1,
Yu Tianyu1
Affiliation:
1. College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Abstract
Background:
In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors
(MOSFETs), optimization of timing characteristic is one of the major concerns in the design
of modern digital integrated circuits.
Objective:
This study proposes an effective back-gate-biasing technique to comprehensively investigate
the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo
methodology.
Methods:
To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor
(CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative
metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced
and the input/output curves were measured. Since back-gate bias is technology dependent, we
present in parallel results with and without VBG.
Results:
It is found that the suppression of RDF-induced timing variations can be achieved by appropriately
adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations.
Consequently, the timing parameters and their variations are reduced and, moreover they are
also insensitive to channel doping with back-gate bias.
Conclusion:
Circuit designers can appropriately use back-gate bias to minimize timing variations
and improve the performance of CMOS integrated circuits.
Funder
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation of China
Publisher
Bentham Science Publishers Ltd.
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials