On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET‘s;Laux;IEEE Trans Electron Dev,1984
2. Analytical treatment of MOSFET source–drain resistance;Pimbley;IEEE Trans Electron Dev,1987
3. Measuring the effective channel length of MOSFET’s;Ng;IEEE Circ Dev Mag,1990
4. A new “shift and ratio” method for MOSFET channel-length extraction;Taur;IEEE Electron Dev Lett,1992
5. Extracting the series resistance and effective channel length of short-channel MOSFET’s at liquid nitrogen temperature;Garcia Sanchez;Solid State Electron,1994
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Series Resistance on Bulk CMOS Current Matching Over the 5–300K Temperature Range;IEEE Electron Device Letters;2017-07
2. A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters;Microelectronics Reliability;2017-02
3. A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs;IEEE Transactions on Electron Devices;2016-05
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