Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31906/01483980.pdf?arnumber=1483980
Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs;Solid-State Electronics;2019-09
2. Investigation of Parasitic Resistance Components in the Case of Microwave Irradiation in Poly-Si Annealing;Journal of the Korean Physical Society;2018-10
3. Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs;Japanese Journal of Applied Physics;2016-03-18
4. Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors;Journal of Nano Research;2016-02
5. On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET;Solid-State Electronics;2015-09
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