Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors-Reference-Cited by-同舟云学术

Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors

Published:2016-02 Issue: Volume:39 Page:17-33
ISSN:1661-9897
Container-title:Journal of Nano Research
language:
Short-container-title:JNanoR

Author:

Rudenko Tamara¹,Barraud Sylvain²,Georgiev Yordan M.³,Lysenko Vladimir¹,Nazarov Alexei N.¹

Affiliation:

1. National Academy of Sciences of Ukraine

2. CEA-LETI

3. University College Cork

Abstract

This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/JNanoR.39.17.pdf

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