Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching-Reference-Cited by-同舟云学术

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Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Published:2008-06 Issue:6 Volume:52 Page:962-967
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gao Haiyong,Yan Fawang,Zhang Yang,Li Jinmin,Zeng Yiping,Wang Guohong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Nitride-based LEDs fabricated on patterned sapphire substrates;Chang;Solid-State Electron,2003

2. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy;Tadatomo;Jpn J Appl Phys,2001

3. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes;Watanabe;Appl Phys Lett,2003

4. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning;Cuong;Appl Phys Lett,2007

5. GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy;Feng;J Crystal Growth,2004

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1. Recent progress of laser processing technology in micro-LED display manufacturing: A review;Optics & Laser Technology;2025-02

2. Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis;Ceramics International;2023-03

3. Material removal mechanism of sapphire substrates with four crystal orientations by double-sided planetary grinding;Ceramics International;2020-04

4. Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation;Applied Surface Science;2018-05

5. RETRACTED: Periodically patterned micro-cone textures as high-efficiency light harvesting structure for broadband absorption enhancement in thin film silicon solar cells;Solar Energy;2018-01

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