Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode-Reference-Cited by-同舟云学术

Generated Carrier Dynamics in V-Pit-Enhanced InGaN/GaN Light-Emitting Diode

Author:

Ajia Idris A.¹,Edwards Paul R.²^ORCID,Pak Yusin¹,Belekov Ermek¹,Roldan Manuel A.³,Wei Nini³,Liu Zhiqiang⁴,Martin Robert W.²,Roqan Iman S.¹^ORCID

Affiliation:

1. Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia

2. Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, United Kingdom

3. Imaging and Characterization Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia

4. Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

Reference45 articles.

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