On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)-Reference-Cited by-同舟云学术

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On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)

Published:2011-07 Issue:1 Volume:61 Page:13-17
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Huang Chien-Chang,Chen Huey-Ing,Cheng Shiou-Ying,Chen Li-Yang,Tsai Tsung-Han,Liu Yi-Chun,Chen Tai-You,Hsu Chi-Hsiang,Liu Wen-Chau

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET

2. A novel InGaP/InGaAs/GaAs double /spl delta/-doped pHEMT with camel-like gate structure

3. Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

4. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

5. Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen sensing performance of a GaN-based Schottky diode with an H2O2 treatment and electroless plating approach;Sensors and Actuators B: Chemical;2019-10

2. Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure;Applied Surface Science;2015-06

3. Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches;Sensors and Actuators B: Chemical;2015-06

4. An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches;Solid-State Electronics;2015-03

5. Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET);Sensors and Actuators B: Chemical;2014-01

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