An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches-Reference-Cited by-同舟云学术

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An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches

Published:2015-03 Issue: Volume:105 Page:45-50
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Chun-Chia,Chen Huey-Ing,Liu I-Ping,Chou Po-Cheng,Liou Jian-Kai,Tsai Jung-Hui,Liu Wen-Chau

Funder

Ministry of Science and Technology of the Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT

2. High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

3. Depletion-mode and enhancement-mode InGaP/GaAs -HEMTs for low supply-voltage applications

4. Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application

5. High Uniformity ( Al0.3Ga0.7 ) 0.5In0.5P / InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches;Science of Advanced Materials;2021-01-01

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