Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs-Reference-Cited by-同舟云学术

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Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs

Published:2015-04 Issue: Volume:106 Page:12-17
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Downey B.P.,Meyer D.J.,Katzer D.S.,Marron T.M.,Pan M.,Gao X.

Funder

Office of Naval Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices;Jessen;IEEE Trans Electron Devices,2007

2. AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications;Guo;Phys Status Solidi A,2010

3. Power electronics on InAlN/(In)GaN: prospect for a record performance;Kuzmik;IEEE Electron Device Lett,2001

4. Barrier-layer scaling of InAlN/GaN HEMTs;Medjdoub;IEEE Electron Device Lett,2008

5. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax>300GHz;Schuette;IEEE Electron Device Lett,2013

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1. Gate trench dry etching technology with damage blocking layer for GaN HEMT devices;Vacuum;2024-08

2. Low damage atomic layer etching technology for gate recessed fabrication;Vacuum;2023-11

3. High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applications;J INFRARED MILLIM W;2023

4. Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures;APL Materials;2021-11-01

5. Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric;Vacuum;2021-09

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