Low damage atomic layer etching technology for gate recessed fabrication-Reference-Cited by-同舟云学术

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Low damage atomic layer etching technology for gate recessed fabrication

Published:2023-11 Issue: Volume:217 Page:112591
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Guo J.Q.^ORCID,Wei K.,Zhang S.,He X.Q.,Zhang Y.C.,Zhang R.Z.,Wang J.C.,Wang K.Y.,Huang S.,Zheng Y.K.,Wang X.H.^ORCID,Liu X.Y.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference32 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction;Asif Khan;Appl. Phys. Lett.,1993

2. High power applications for GaN-based devices;Trew;Solid State Electron.,1997

3. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage;Lanford;Electron. Lett.,2005

4. GaN: processing, defects, and devices;Pearton;J. Appl. Phys.,1999

5. Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs;Khan;Electrochem. Solid State Lett.,2002

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1. Gate trench dry etching technology with damage blocking layer for GaN HEMT devices;Vacuum;2024-08

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