Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages-Reference-Cited by-同舟云学术

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Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages

Published:2016-01 Issue: Volume:115 Page:152-159
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luong G.V.,Strangio S.,Tiedemannn A.,Lenk S.,Trellenkamp S.,Bourdelle K.K.,Zhao Q.T.,Mantl S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

2. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh;Proc IEEE,2010

3. An improved Si tunnel field effect transistor with a buried strained source;Zhao;Electron Device Lett IEEE,2011

4. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator;Kazazis;Appl Phys Lett,2009

5. Dewey G, Chu-Kung B, Boardman J, Fastenau JM, Kavalieros J, Kotlyar R, Liu WK, Lubyshev D, Metz M, Mukherjee N, Oakey P, Pillarisetty R, Radosavljevic M, Then HW, Chau R. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing. In: 2011 Int Electron Dev Meet, vol. 3; December 2011. p. 33.6.1–.4.

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