Electrostatically doped ballistic transition metal dichalcogenide tunnel field-effect transistors
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10854-024-12626-0.pdf
Reference24 articles.
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3. A. Aghanejad Ahmadchally, M. Gholipour, Investigation of 6-armchair graphene nanoribbon tunnel FETs. J. Comput. Electron. (2021). https://doi.org/10.1007/s10825-021-01709-4
4. A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature (2011). https://doi.org/10.1038/nature10679
5. G. Gupta, B. Rajasekharan, R.J.E. Hueting, Electrostatic doping in semiconductor devices. IEEE Trans. Electron Devices (2017). https://doi.org/10.1109/TED.2017.2712761
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