Author:
Levinshtein Michael E.,Mnatsakanov Tigran T.,Ivanov Pavel A.,Palmour John W.,Das Mrinal K.,Hull Brett A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Singh R, Irvin KG, Richmond JT, Palmour JW. High-temperature performance of 10 kilovolts, 200 amperes (pulsed) 4H-SiC pin rectifiers. In: Proceedings of the ICSCRM-2001. p. 1265–8.
2. Sugawara Y, Takayama D, Asano K, Singh R, Palmour J, Hayashi T. 12–19kV 4H-SiC pin diodes with low power loss. In: Proceedings of the 2001 international symposium on power semiconductor devices & ics. p. 27–30.
3. Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions;Hillkirk;Solid State Electron,2004
4. Calculation of lattice heating in SiC RF power devices;Bertilsson;Solid State Electron,2004
5. Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe,2001
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