Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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3. Thermal effects on the forward characteristics of silicon p-i-n diodes at high pulse currents;Silber;Solid State Electron,1973
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