Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i

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Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode

Published:2009-09 Issue:9 Volume:43 Page:1198-1204
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gorbatyuk A. V.,Serkov F. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609090176.pdf

Reference20 articles.

1. A. V. Gorbatyuk and K. V. Igumnov, Pis’ma Zh. Tekh. Fiz. 34, 58 (2008) [Tech. Phys. Lett. 34, 118 (2008)].

2. A. V. Gorbatyuk, I. E. Panaĭotti, Pis’ma Zh. Tekh. Fiz. 32, 37 (2006) [Tech. Phys. Lett. 32, 975 (2006)].

3. Zh. I. Alferov and A. I. Uvarov, Élektrichestvo, No. 5, 46 (1963).

4. A. I. Baranenkv and V. V. Osipov, Mikroélektronika 1, 63 (1972).

5. I. V. Grekhov and A. E. Otblesk, Zh. Tekh. Fiz. 54, 1787 (1984) [Sov. Tech. Phys. 29, 1040 (1984)].

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