Calculation of lattice heating in SiC RF power devices-Reference-Cited by-同舟云学术

Calculation of lattice heating in SiC RF power devices

Published:2004-12 Issue:12 Volume:48 Page:2103-2107
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bertilsson Kent,Harris C.,Nilsson Hans-Erik

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Progress in high-power SiC microwave MESFETs;Allen;IEEE Int Microwave Symp Dig,1999

2. Self-heating effects in silicon carbide MESFETs;Royet;IEEE Trans Electron Dev,2000

3. Liu W, Danielsson E, Zetterling C-M, Östling M. Electro-thermal investigation of high power silicon carbide transistors. In: Proc 4th IEEE Int Symp on High Density Packaging and Component Failure Analysis in Electronics Manufacturing (HDP’ 02), 2002. p. 175–8

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