Physical understanding and modeling of SANOS retention in programmed state-Reference-Cited by-同舟云学术

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Physical understanding and modeling of SANOS retention in programmed state

Published:2008-04 Issue:4 Volume:52 Page:577-583
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Furnémont Arnaud,Cacciato Antonio,Breuil Laurent,Rosmeulen Maarten,Maes Herman,De Meyer Kristin,Van Houdt Jan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Schuetz R, Oh H, Kim JK, Pyeon HB, Przybylski S, Gillingham P. Hyperlink NAND flash architecture for mass storage applications. In: Proceedings of the non volatile semiconductor memory workshop; 2007. p. 3–4.

2. Prall K. Scaling non-volatile memory below 30nm. In: Proceedings of the non volatile semiconductor memory workshop; 2007. p. 5–10.

3. A highly manufacturable 32-Gb multi-level NAND flash memory with 0.0098μm2 cell size using TANOS cell technology;Park;IEDM Tech Dig,2006

4. Future outlook of NAND Flash technology for 40nm node and beyond;Kim;NVSMW Proc,2006

5. On the go with SONOS;White;IEEE Circ Dev,2000

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1. Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory;ECS Transactions;2016-05-04

2. Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory;Solid-State Electronics;2015-11

3. Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory;Journal of Semiconductors;2015-09

4. Inert ambient annealing effect on MANOS capacitor memory characteristics;Nanotechnology;2015-03-12

5. Retention characteristics of gate-all-around metal–oxide–nitride–oxide–semiconductor devices for the trap energy level dependence at elevated temperature;Japanese Journal of Applied Physics;2014-09-22

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