Author:
Kakoschke R.,Pescini L.,Power J.R.,van der Zanden K.,Andersen E.-O.,Gong Y.,Allinger R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. ITRS 2006 update. Available from: http://www.itrs.net/Links/2006Update/FinalToPost/00_ExecSum2006Update.pdf, p. 4–5.
2. Lee WH, Clemens JT, Keller RC, Manchanda L. A novel high K inter-poly dielectric (IPD), Al2O3 for low voltage/high speed flash memories: erasing in msec at 3.3V. In: Proceedings of 1997 symposium on VLSI technology, Kyoto, Japan. p. 117–8.
3. Challenges for the DRAM cell scaling to 40nm;Mueller;IEDM Tech Dig,2005
4. Highly manufacturable 32Gb multi-level NAND Flash memory with 0.0098μm2 cell size using TANOS(Si–Oxide–Al2O3–TaN) cell technology;Youngwoo;IEDM Tech Dig,2006
5. Wellekens D, Blomme P, Govoreanu B, De Vos J, Haspeslagh L, Van Houdt J et al. Al2O3 based Flash interpoly dielectrics: a comparative retention study. In: Proc. ESSDERC 2006. p. 238–41.
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