Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures-Reference-Cited by-同舟云学术

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Published:2014-11-07 Issue:17 Volume:116 Page:174506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sambuco Salomone L.¹,Kasulin A.¹,Lipovetzky J.¹²,Carbonetto S. H.¹,Garcia-Inza M. A.¹,Redin E. G.¹,Berbeglia F.¹,Campabadal F.³,Faigón A.¹²

Affiliation:

1. Laboratorio de Física de Dispositivos—Microelectrónica, Instituto de Ciencias de la Ingeniería (INTECIN), Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Buenos Aires, Argentina

2. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Buenos Aires, Argentina

3. Instituto de Microelectrónica de Barcelona (IMB)—Centro Nacional de Microelectrónica (CNM)—Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, Spain

Funder

ANPCyT

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900851

Reference31 articles.

1. High performance silicon-on-insulator based ion-sensitive field-effect transistor using high-k stacked oxide sensing membrane

2. D. Wellekens , P. Blomme , B. Govoreanu , J. D. Vos , L. Haspeslagh , J. Van Houdt , D. P. Brunco , and K. van der Zanden , in Proceedings of the IEEE European Solid-State Device Research Conference (2006), pp. 238–241.

3. Use of Al2O3 as inter-poly dielectric in a production proven 130nm embedded Flash technology

4. Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

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