High performance silicon-on-insulator based ion-sensitive field-effect transistor using high-k stacked oxide sensing membrane

Author:

Jang Hyun-June,Cho Won-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Preparation and Characterization of High Quality Zinc Oxide Thin Films for Optoelectronic Applications;2024 International Conference on Artificial Intelligence, Computer, Data Sciences and Applications (ACDSA);2024-02-01

2. ISFET‐based sensors for (bio)chemical applications: A review;Electrochemical Science Advances;2022-03-14

3. Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane;Journal of The Electrochemical Society;2022-03-01

4. Recent advances in ion‐sensitive field‐effect transistors for biosensing applications;Electrochemical Science Advances;2022-02-18

5. Performative Analysis on Ion-Sensitive Field-Effect Transistor by Varying Intrinsic Parameter;Sustainable Technology and Advanced Computing in Electrical Engineering;2022

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