Abstract
In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2 were investigated. Si wires were fabricated by nanoimprint lithography and Si anisotropic/isotropic reactive-ion etching processes. The Si wires, with a line width of ∼200 nm, were undercut and nearly suspended, which formed an
Ω
-shape cross-section. The aspects of wires were investigated using an optical microscope, an atomic force microscope, a scanning electron microscope, and a transmission electron microscope. The sensitivity, hysteresis, and drift of ISFETs were investigated. The above sensing properties were all significantly improved with the proposed channels and the sensing membrane stacks. As such, high-performance ISFETs can be realized for future biochemical applications.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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