Electron trapping in amorphous Al2O3-Reference-Cited by-同舟云学术

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Electron trapping in amorphous Al2O3

Published:2018-02-28 Issue:8 Volume:123 Page:085304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sambuco Salomone L.¹^ORCID,Campabadal F.²^ORCID,Faigón A.¹³

Affiliation:

1. Laboratorio de Física de Dispositivos – Microelectrónica, Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina

2. Instituto de Microelectrónica de Barcelona (IMB), Centro Nacional de Microelectrónica (CNM), Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, Spain

3. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Buenos Aires, Argentina

Funder

Consejo Nacional de Investigaciones Científicas y Técnicas

Universidad de Buenos Aires

Ministerio de Economía y Competitividad

MINCyT | Agencia Nacional de Promoción Científica y Tecnológica

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5005546

Reference42 articles.

1. Use of Al2O3 as inter-poly dielectric in a production proven 130nm embedded Flash technology

2. Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

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1. Tailoring the aluminum nanocrystal surface oxide for all-aluminum-based antenna-reactor plasmonic photocatalysts;Proceedings of the National Academy of Sciences;2024-03-05

2. On the Structure of Oxygen Deficient Amorphous Oxide Films;Advanced Science;2023-12-26

3. Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD;Electronics;2023-02-10

4. Atomic Defects Profiling and Reliability of Amorphous Al₂O₃ Metal–Insulator–Metal Stacks;IEEE Transactions on Electron Devices;2022-07

5. A high-k composite of TiO2–ZrO2 for charge trapping memory device with a large memory window under a low voltage;Journal of Materials Science: Materials in Electronics;2021-09-07

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