A study on HfO2 RRAM in HRS based on I–V and RTN analysis

Author:

Puglisi Francesco M.,Pavan Paolo,Padovani Andrea,Larcher Luca

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Kim YB et al. Bi-layered RRAM with unlimited endurance and extremely uniform switching. In: Proceedings of Symposium on VLSI Technology (VLSIT), 14–16 June 2011. p. 52–3.

2. Wang XP et al. Highly compact 1T–1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 10–13 December 2012. p. 20.6.1, 20.6.4.

3. Lee J et al. Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 6–8 Dec. 2010. p. 19.5.1, 19.5.4.

4. Tran XA et al. High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application. Symposium on VLSI Technology (VLSIT), 14–16 June 2011. p. 44, 45.

5. Metal oxide resistive memory switching mechanism based on conductive filament properties;Bersuker;J Appl Phys,2011

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