A physical hydrodynamic 2D model for simulation and scaling of InP/InGaAs(P) DHBTs and circuits with limited complexity

Author:

Ruiz-Palmero José M.,Hammer Urs,Jäckel Heinz

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Griffith Z, Dahlstrom M, Rodwell M-J-W, Fang X-M, Loubychev D, Wu Y, et al. InGaAs/InP Type-I DHBTs w/100nm collector and 491GHz ft, 415GHz fmax. In: 2005 International Conference on Indium Phosphate and Related Materials IEEE 2005. p. 343–6.

2. InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz ft and 505-GHz fmax;Griffith;IEEE Electron Dev Lett,2005

3. Self-aligned InP DHBT with ft and fmax over 300GHz in a new manufacturable technology;Gang;IEEE Electron Dev Lett,2004

4. Griffith Z, Dahlstrm M, Rodwell M-J-W, Urteaga M, Pierson R, Rowell P, et al. Ultra high frequency static dividers >150GHz in a narrow mesa InGaAs/InP DHBT technology. In: Proceedings of the 2004 bipolar/BiCMOS circuits and technology meeting IEEE, 2004. p. 176–9.

5. Hitko D-A, Hussain T, Jensen J-F, Royter Y, Morton S-L, Matthews D-S, et al. A low power (45mW/latch) static 150GHz CML divider. IEEE compound semiconductor integrated circuit symposium. In: 2004 IEEE CISC symposium IEEE 2004. p. 167–70.

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