Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements-Reference-Cited by-同舟云学术

Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements

Published:2013-03 Issue:3 Volume:60 Page:1068-1074
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kone Gilles A.,Grandchamp Brice,Hainaut Cyril,Marc François,Labat Nathalie,Zimmer Thomas,Nodjiadjim Virginie,Riet Muriel,Dupuy Jean-Yves,Godin Jean,Maneux Cristell

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6466448/06459574.pdf?arnumber=6459574

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5. A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times;IEEE Transactions on Electron Devices;2019-12