Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate-Reference-Cited by-同舟云学术

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Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate

Published:2020-11-16 Issue: Volume: Page:
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Container-title:2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Shiratori Yuta,Hoshi Takuya,Matsuzaki Hideaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9392908/9392902/09392903.pdf?arnumber=9392903

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate;Solid-State Electronics;2024-07

3. InP-based Double-heterojunction Bipolar Transistors for Large-capacity Optical Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01

4. Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain;Journal of Applied Physics;2024-04-09

5. Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD;Physica Scripta;2024-04-02

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