Determining the base resistance of InP HBTs: An evaluation of methods and structures-Reference-Cited by-同舟云学术

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Published:2016-09 Issue: Volume:123 Page:68-77
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nardmann Tobias,Krause Julia,Pawlak Andreas,Schroter Michael

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

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3. Schroter M, Pawlak A. Physics-based nonlinear compact modeling of HBTs for mm-wave applications. In: 2014 International microwave symposium, Tampa Bay, Florida, USA; 2014.

4. Pawlak A. Advanced modeling of silicon-germanium heterojunction bipolar transistors, Ph.D. thesis. Chair for Electron Devices and Integrated Circuits, TU Dresden; 2014.

5. Krause J. Model parameter extraction for very advanced heterojunction bipolar transistors, Ph.D. thesis. Chair for Electron Devices and Integrated Circuits, TU Dresden; 2015.

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