An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique-Reference-Cited by-同舟云学术

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An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique

Published:2022-03 Issue: Volume:121 Page:105366
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Cheng Lin,Lu Hongliang^ORCID,Xia Minjie,Cheng Wei,Zhang Yuming,Zhang Yimen

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. 80-110-GHz broadband linear PA with 33% peak PAE and comparison of stacked common base and common emitter PA in InP[J];Liu;IEEE Microw. Wireless Compon. Lett.,2021

2. Terahertz signal source and receiver operating near 600 GHz and their 3-D imaging application[J];Kim;IEEE Trans. Microw. Theor. Tech.,2021

3. 1-D drift-diffusion simulation of two-valley semiconductors and devices[J];Muller;IEEE Trans. Electron. Dev.,2021

4. A 4262 GHz transformer-based broadband mm-wave InP PA with second-harmonic waveform engineering and enhanced linearity[J];Liu;IEEE Trans. Microw. Theor. Tech.,2021

5. Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT broadband triple-stacked distributed amplifiers with active bias terminations[J];Kobayashi;IEEE J. Solid State Circ.,2020

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect;Microwave and Optical Technology Letters;2024-08

2. Parameter extraction for photodiode equivalent circuit model based on hybrid genetic algorithm;Microelectronics Journal;2024-01

3. A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs With Self-Heating Effect Consideration;IEEE Transactions on Microwave Theory and Techniques;2024

4. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT;IEEE Transactions on Device and Materials Reliability;2023-12

5. An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network;Micromachines;2023-10-30

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