Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/9177374/09085413.pdf?arnumber=9085413
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22
2. InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design;IEEE Transactions on Microwave Theory and Techniques;2023
3. An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique;Microelectronics Journal;2022-03
4. A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits;IEEE Transactions on Instrumentation and Measurement;2022
5. From Transistor Parameters to PA Circuit Performance (Invited);2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
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