Author:
Kilchytska V.,Chung T.M.,Olbrechts B.,Vovk Ya.,Raskin J.-P.,Flandre D.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Buried layer engineering to reduce the drain-induced barrier lowering of sub-0.05μm SOI-MOSFET;Koh;Jpn J Appl Phys,1999
2. Silicon-on-nothing (SON) – an innovative process for advanced CMOS;Jurczak;IEEE Trans Electron Dev,2000
3. First 80nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance;Monfray;IEDM,2001
4. SON (silicon on nothing) MOSFET using ESS (empty space in silicon) technique for SoC applications;Sato;IEDM,2001
5. SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells;Monfray;IEDM,2004
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