Characterization and thermal steadiness of trenched stepped gate SON MOSFET for future CMOS devices-Reference-Cited by-同舟云学术

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Characterization and thermal steadiness of trenched stepped gate SON MOSFET for future CMOS devices

Published:2023-04-07 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Devices for Integrated Circuit (DevIC)
language:
Short-container-title:

Author:

Mishra Sikha¹,Mohanty Soumya S.¹,Mishra Guru Prasad²

Affiliation:

1. Institute of Technical Education and Research, Siksha ‘O’ Anusandhan deemed to be University,Dept.of Electronics and Commnication Engineering,Bhubaneswar!,India

2. National Institute of Technology,Dept.of Electronics and Telecommnication Engineering,Raipur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134812.pdf?arnumber=10134812

Reference39 articles.

1. Physics based Threshold Voltage Analysis of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) Nanoscale MOSFET and its multilayered gate architecture;malik;International Journal of Microwave and Optical Technology,2010

2. Fine particles, thin films and exchange anisotropy;jacobs;Magnetism,1963

3. Impact of structural parameters on DC performance of recessed channel SOI-MOSFET

4. Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I

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