Impact of Channel Doping Concentration on the Performance Characteristics and the Reliability of Ultra-Thin Double Gate DG-FinFET Compared with Nano-Single Gate FD-SOI-MOSFET by Using TCAD-Silvaco Tool

Author:

Bourahla N.,Hadri B.,Bourahla A.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference43 articles.

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3. Mohapatra SK, Pradhan KP, Sahu PK (2012) Nanoscale SOI N-MOSFETS with different gate engineering having biaxial strained channel-a superlative study. J Electron Devices 15:1261–1268

4. Mohapatra SK, Pradhan KP, Sahu PK (2013) Some device design considerations to enhance the performance of DG-MOSFETs. Trans Electr Electron Mater 14(6):291–294

5. Lakhanpal A, Rana SB, Rana AK (2016) Review on Double-gate MOSFETs-Scaling, Operation, Challenges and Opportunities. International Journal of Advanced Research 4:367–372. https://doi.org/10.21474/IJAR01

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