Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress-Reference-Cited by-同舟云学术

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress

Published:2011-06 Issue:1 Volume:60 Page:58-64
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Viet Dinh Thanh,Hong Sung-Min,Jungemann Christoph

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

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4. Khater M, Rieh J-S, Adam T, Chinthakindi A, Johnson J, Krishnasamy R, et al. SiGe HBT technology with fmax/fT=350/300GHz and gate delay below 3.3ps. In: IEEE Tech Dig IEDM; 2004. p. 247–50.

5. Scaling of SiGe heterojunction bipolar transistors;Rieh;Proc IEEE,2005

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