Scaling of SiGe Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

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Scaling of SiGe Heterojunction Bipolar Transistors

Published:2005-09 Issue:9 Volume:93 Page:1522-1538
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Jae-Sung Rieh ,Greenberg D.,Stricker A.,Freeman G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/32147/01495904.pdf?arnumber=1495904

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Investigation of Electrostatic Doped Heterostructure Vertical Si(1-x)Gex/Si Nanotube TFET;Microelectronics Journal;2024-09

2. BEOL Thermal Resistance Extraction in SiGe HBTs;IEEE Transactions on Electron Devices;2022-12

3. A two stage cascode LNA using modified derivative superposition technique in 0.13μm HBT with an IIP3 of 2 dBm and NF of 4.8 dB for IEEE 802.11ad standard;Integration;2022-11

4. SiGe HBTs;Springer Series in Optical Sciences;2021-12-08

5. A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications;Micromachines;2021-12-07

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