BEOL Thermal Resistance Extraction in SiGe HBTs-Reference-Cited by-同舟云学术

BEOL Thermal Resistance Extraction in SiGe HBTs

Published:2022-12 Issue:12 Volume:69 Page:6541-6546
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nidhin K.¹^ORCID,Balanethiram Suresh²^ORCID,Nair Deleep R.¹^ORCID,D'Esposito Rosario³^ORCID,Mohapatra Nihar R.⁴^ORCID,Fregonese Sebastien⁵^ORCID,Zimmer Thomas⁵^ORCID,Chakravorty Anjan¹^ORCID

Affiliation:

1. Department of Electrical Engineering, IIT Madras, Chennai, India

2. Department of Electronics and Communication Engineering, National Institute of Technology Puducherry, Karaikal, India

3. Micrometer Semiconductor, Avezzano, Italy

4. Department of Electrical Engineering, IIT Gandhinagar, Gandhinagar, India

5. IMS Laboratory, University of Bordeaux, Talence, France

Funder

Indian Space Research Organisation

Department of Science and Technology (DST), India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09931331.pdf?arnumber=9931331

Reference23 articles.

1. Extraction of Compact Static Thermal Model Parameters for SiGe HBTs

2. Experimental method to thermally deembed pads from R/sub TH/ measurements

3. Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods [GaAs devices]

4. Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs

5. A practical method to extract the thermal resistance for heterojunction bipolar transistors

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1. Electro-Thermal Investigation of SiGe HBTs: A Review;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16