Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector-Reference-Cited by-同舟云学术

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Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector

Published:2021-03-03 Issue: Volume: Page:
ISSN:
Container-title:2021 International Symposium on Devices, Circuits and Systems (ISDCS)
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Author:

Wen Jianhao,Wei Jinxi,Song Qi,Wang Guanyu,Zhou Chunyu,Wang Wei

Funder

National Natural Science Foundation of China

Chongqing University of Posts and Telecommunications

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9397888/9397889/09397921.pdf?arnumber=9397921

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Simulation of a Novel Hetero-junction Bipolar Transistor with Gate-Controlled Current Gain;International Journal of Engineering;2023

2. Deep learning based six‐dimensional pose estimation in virtual reality;Computational Intelligence;2021-04-26

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