Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions
Author:
Funder
Yonsei University
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm;Hisamoto;IEEE Trans Electron Dev,2000
2. Multiple-gate SOI MOSFETs: device design guidelines;Park;IEEE Trans Electron Dev,2002
3. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors;Ferain;Nature,2011
4. Study of random-dopant-fluctuation (RDF) effects for the trigate bulk MOSFET;Shin;IEEE Trans Electron Dev,2009
5. Junctionless multigate field-effect transistor;Lee;Appl Phys Lett,2009
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3. Ultra-low-power subthreshold logic with germanium junctionless transistors;Semiconductor Science and Technology;2021-06-08
4. Analytical Current–Voltage Modeling and Analysis of the MFIS Gate-All-Around Transistor Featuring Negative-Capacitance;Electronics;2021-05-14
5. Unified compact model for junctionless multiple-gate FETs including source/drain extension regions;Physica Scripta;2020-11-10
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